✦ LIBER ✦

p+-n junction formed by dual implantation of Zn and As in GaAs junction field-effect transistors

✍ Scribed by Taira, K.; Kasahara, J.; Kato, Y.; Arai, M.; Watanabe, N.

Book ID: 125804106
Publisher: IEEE
Year: 1983
Tongue: English
Weight: 339 KB
Volume: 4
Category: Article
ISSN: 0741-3106
DOI: 10.1109/EDL.1983.25746

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The effect of Co incorporation on electr

The effect of Co incorporation on electrical characteristics of n +/p shallow junction formed by dopant implantation into CoSi 2 and anneal

✍ Ji-Soo Park; Dong Kyun Sohn; Jong-Uk Bae; Chang Hee Han; Jin Won Park 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 138 KB

Gain control operation of a four-termina

Gain control operation of a four-terminal p-n-p In0.53Ga0.47As/InP junction field-effect transistor grown by molecular-beam epitaxy

✍ Cheng, J.; Forrest, S.R.; Guth, G.; Wunder, R. 📂 Article 📅 1986 🏛 IEEE 🌐 English ⚖ 484 KB

Comparison of p+–n junction formed by BF

Comparison of p+–n junction formed by BF2+ and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics

✍ Ajay K. Srivastava; Ashutosh Bhardwaj; Kirti Ranjan; Namrata; Sudeep Chatterji; 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 458 KB

High On/Off Ratio in Enhancement-Mode Al

High On/Off Ratio in Enhancement-Mode Al x Ga 1- x N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

✍ Fujii, Takahiro; Tsuyukuchi, Norio; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hi 📂 Article 📅 2006 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 120 KB

Aluminum oxide as passivation and gate i

Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

✍ KordosÌ, P.; KuÌdela, R.; Stoklas, R.; CÌicÌo, K.; Mikulics, M.; GregusÌova 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 558 KB

Noise of hot carriers in the channel of

Noise of hot carriers in the channel of n silicon junction gate field effect transistors: J. P. Nougier, D. Sodini, M. Rolland, D. Gasquet and G. Lecoy. Solid-St. Electron.21, 133 (1978)

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 128 KB