High On/Off Ratio in Enhancement-Mode Al x Ga 1- x N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

✍ Scribed by Fujii, Takahiro; Tsuyukuchi, Norio; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

• Book ID: 118069983
• Publisher: Institute of Pure and Applied Physics
• Year: 2006
• Tongue: English
• Weight: 120 KB
• Volume: 45
• Category: Article
• ISSN: 0021-4922
• DOI: 10.1143/jjap.45.l1048