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Compressively Strained In x Al 1- x N/Al 0.22 Ga 0.78 N/GaN ( x = 0.245–0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers

✍ Scribed by Hiroki, Masanobu; Maeda, Narihiko; Shigekawa, Naoteru

Book ID: 127155003
Publisher: Institute of Pure and Applied Physics
Year: 2010
Tongue: English
Weight: 377 KB
Volume: 49
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.49.04df13

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