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[IEEE International Conference on Indium Phosphide and Related Materials - Denver, CO, USA (1990.04.23-1990.04.25)] International Conference on Indium Phosphide and Related Materials - An In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub x/Ga/sub 1-x/As heterostructure field-effect transistor with an In-enriched channel

✍ Scribed by Bahl, S.R.; del Alamo, J.A.

Book ID: 126611823
Publisher: IEEE
Year: 1990
Weight: 263 KB
Category: Article
DOI: 10.1109/ICIPRM.1990.203065

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