Gain control operation of a four-terminal p-n-p In0.53Ga0.47As/InP junction field-effect transistor grown by molecular-beam epitaxy

✍ Scribed by Cheng, J.; Forrest, S.R.; Guth, G.; Wunder, R.

• Book ID: 114595572
• Publisher: IEEE
• Year: 1986
• Tongue: English
• Weight: 484 KB
• Volume: 33
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1986.22560