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In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double-heterojunction p-n-p bipolar transistors grown by molecular beam epitaxy

✍ Scribed by Won, T.; Peng, C.K.; Chyi, J.; Morkoc, H.

No coin nor oath required. For personal study only.

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