Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

✍ Scribed by Kordoš, P.; Kúdela, R.; Stoklas, R.; Čičo, K.; Mikulics, M.; Gregušová, D.; Novák, J.

• Book ID: 121004565
• Publisher: American Institute of Physics
• Year: 2012
• Tongue: English
• Weight: 558 KB
• Volume: 100
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3701584