Optical properties of thick-film GaN grown by hydride vapor phase epitaxy on MgAl2O4substrate
β Scribed by S. T. Kim; Y. J. Lee; D. C. Moon; C. Lee; H. Y. Park
- Book ID
- 107457747
- Publisher
- Springer US
- Year
- 1998
- Tongue
- English
- Weight
- 158 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0361-5235
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π SIMILAR VOLUMES
## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperatureβdepe
We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.