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Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxy

✍ Scribed by Chinho Park; Seokki Yeo; Jin-ho Kim; Deoksun Yoon; Timothy J. Anderson

Book ID
108288925
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
537 KB
Volume
498
Category
Article
ISSN
0040-6090

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## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions