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Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy

✍ Scribed by F Dwikusuma; J Mayer; T.F Kuech

Book ID: 108341999
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 534 KB
Volume: 258
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(03)01506-9

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