𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Red luminescence from freestanding GaN grown on LiAlO2substrate by hydride vapor phase epitaxy

✍ Scribed by Wang, Lijun ;Richter, E. ;Weyers, M.

Book ID
105363916
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
171 KB
Volume
204
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperature‐dependent PL data show that the 1.78 eV red band is due to a donor‐acceptor pair (DAP) transition. Excitation‐intensity‐dependent PL measurements at 10 K and 300 K reveal that the 1.85 eV band at 300 K is the overlap of the DAP band and the electron‐to‐acceptor (e, A^0^) transition band. Ion‐implantation experiments confirmed that both carbon and oxygen impurities are involved in the red luminescence transition. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

📜 SIMILAR VOLUMES

Self-Separation of Freestanding GaN from
Self-Separation of Freestanding GaN from Sapphire Substrates by Hydride Vapor Phase Epitaxy
✍ Tomita, K. ;Kachi, T. ;Nagai, S. ;Kojima, A. ;Yamasaki, S. ;Koike, M. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB 👁 2 views

Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca