## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperatureβdepe
β¦ LIBER β¦
Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy
β Scribed by Jur??nas, S. ;Miasojedovas, S. ;Kuril?ik, G. ;?ukauskas, A. ;Hageman, P. R.
- Book ID
- 105361923
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 104 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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