Hydrogen Induced Yellow Luminescence in GaN Grown by Halide Vapor Phase Epitaxy
β Scribed by R. Zhang; T. F. Kuech
- Book ID
- 107457774
- Publisher
- Springer US
- Year
- 1998
- Tongue
- English
- Weight
- 119 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0361-5235
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π SIMILAR VOLUMES
## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperatureβdepe
Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we