𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

✍ Scribed by G. P. Yablonskii; A. L. Gurskii; E. V. Lutsenko; I. P. Marko; B. Schineller; A. Guttzeit; O. Schön; M. Heuken; K. Heime; R. Beccard; D. Schmitz; H. Juergensen

Book ID
107457805
Publisher
Springer US
Year
1998
Tongue
English
Weight
232 KB
Volume
27
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Defect States in Cubic GaN Epilayer Grow
Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy
✍ Xu, S.J. ;Or, C.T. ;Li, Q. ;Zheng, L.X. ;Xie, M.H. ;Tong, S.Y. ;Yang, Hui 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 89 KB 👁 2 views

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we