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Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy

โœ Scribed by Yuri Sohn; Chinkyo Kim


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
456 KB
Volume
256
Category
Article
ISSN
0169-4332

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Dynamics of the Bound Excitons in GaN Ep
โœ G. Pozina; J.P. Bergman; T. Paskova; B. Monemar ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 148 KB ๐Ÿ‘ 2 views

We report on time-integrated and time-resolved photoluminescence (PL) measurements in 80 mm thick GaN layers grown by hydride vapor phase epitaxy on sapphire substrates. The PL spectra are dominated by free exciton transitions and by three well-resolved emissions assigned to the neutral-donor-bound