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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

✍ Scribed by A. E. Nikolaev; S. V. Rendakova; I. P. Nikitina; K. V. Vassilevski; V. A. Dmitriev

Book ID: 107457811
Publisher: Springer US
Year: 1998
Tongue: English
Weight: 500 KB
Volume: 27
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-998-0401-z

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## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperature‐depe