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The influence of reactor pressure on qualities of GaN layers grown by hydride vapor phase epitaxy

โœ Scribed by X.C. Cao; D.L. Xu; H.M. Guo; C.J. Liu; Z.J. Yin; X.H. Li; K. Qiu; Y.Q. Wang


Book ID
108290266
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
516 KB
Volume
517
Category
Article
ISSN
0040-6090

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