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Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy

✍ Scribed by Kai Qiu; X.H. Li; F. Zhong; Z.J. Yin; X.D. Luo; C.J. Ji; Q.F. Han; J.R. Chen; X.C. Cao; X.J. Xie; Y.Q. Wang


Book ID
107453599
Publisher
Springer US
Year
2007
Tongue
English
Weight
295 KB
Volume
36
Category
Article
ISSN
0361-5235

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## Abstract An __m__ ‐plane GaN layer with a thickness of approximately 500 ΞΌm was successfully obtained on a conventional __m__ ‐plane sapphire substrate with a diameter of 2 inches. The GaN layer was grown by hydride vapor phase epitaxy (HVPE) on a buffer layer of low‐temperature (LT) GaN/Al~4~C~