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Hydride vapor phase epitaxial growth of thick GaN layers with improved surface flatness

✍ Scribed by Frank Habel; Peter Brückner; Jenq-Dar Tsay; Wen-Yueh Liu; Ferdinand Scholz; Dietmar Schmitz; Assadullah Alam; Michael Heuken

Book ID
104557510
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
121 KB
Volume
2
Category
Article
ISSN
1862-6351

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Flow Modulation Growth of Thick GaN by H
Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy
✍ Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofman 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 99 KB 👁 2 views

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.