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on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors

✍ Scribed by Varghese, D.; Moens, P.; Alam, M.A.


Book ID
114620132
Publisher
IEEE
Year
2010
Tongue
English
Weight
908 KB
Volume
57
Category
Article
ISSN
0018-9383

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Channel hot-carrier degradation in pMOS
✍ E. Amat; T. Kauerauf; R. Degraeve; R. RodrΓ­guez; M. NafrΓ­a; X. Aymerich; G. Groe πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 319 KB

A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the