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Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors

✍ Scribed by Chen, J.F.; Shiang-Yu Chen; Kuo-Ming Wu; Shih, J.R.; Kenneth Wu

Book ID: 114619758
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 652 KB
Volume: 56
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2009.2030443

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