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[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors

✍ Scribed by Ludikhuize, A.W.; Slotboom, M.; Nezar, A.; Nowlin, N.; Brock, R.

Book ID: 125813031
Publisher: IEEE
Year: 1997
Weight: 350 KB
Edition: 1997
Category: Article
ISBN-13: 9780780339934
DOI: 10.1109/ISPSD.1997.601430

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