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[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept

✍ Scribed by Omura, I.; Ogura, T.; Sugiyama, K.; Ohashi, H.

Book ID: 127230049
Publisher: IEEE
Year: 1997
Weight: 388 KB
Edition: 1997
Category: Article
ISBN-13: 9780780339934
DOI: 10.1109/ispsd.1997.601476

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