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[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - Switching behaviour of high voltage IGBTs and its dependence on gate-drive

✍ Scribed by Gerstenmaier, Y.C.; Stoisiek, M.

Book ID: 115483525
Publisher: IEEE
Year: 1997
Weight: 415 KB
Edition: 1997
Volume: 0
Category: Article
ISBN-13: 9780780339934
DOI: 10.1109/ispsd.1997.601446

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