𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - High voltage 4 kV emitter switched thyristors

✍ Scribed by Unten, N.; Sawant, S.; Baliga, B.J.

Book ID: 111863122
Publisher: IEEE
Year: 1997
Weight: 326 KB
Edition: 1997
Volume: 0
Category: Article
ISBN-13: 9780780339934
DOI: 10.1109/ispsd.1997.601477

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 9th International Symposium on Pow

[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - An HVIC switch for high-frequency power converters

✍ Carter, D.R.H.; McMahon, R.A. 📂 Article 📅 1997 🏛 IEEE ⚖ 435 KB

[IEEE 9th International Symposium on Pow

[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - Hybrid 3000 A-MOSFET for GTO cascode switches

✍ Oetjen, J.; Sittig, R. 📂 Article 📅 1997 🏛 IEEE ⚖ 422 KB

[IEEE 9th International Symposium on Pow

[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - A robust lateral power MOSFET buffered H-bridge motor driver power IC

✍ Shekar, M.S.; Williams, R.K.; Darwish, M.; Lee, R. 📂 Article 📅 1997 🏛 IEEE ⚖ 562 KB

[IEEE 9th International Symposium on Pow

[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - Switching behaviour of high voltage IGBTs and its dependence on gate-drive

✍ Gerstenmaier, Y.C.; Stoisiek, M. 📂 Article 📅 1997 🏛 IEEE ⚖ 415 KB

[IEEE 9th International Symposium on Pow

[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - Examination of punch through IGBT (PT-IGBT) for high voltage and high current applications

✍ Mochizuki, K.; Ishii, K.; Takeda, M.; Hagino, H.; Yamada, T. 📂 Article 📅 1997 🏛 IEEE ⚖ 413 KB

[IEEE 9th International Symposium on Pow

[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - 1200 V MCCT: a new concept three terminal MOS-gated thyristor

✍ Iwamuro, N.; Iwaana, T.; Harada, Y.; Seki, Y. 📂 Article 📅 1997 🏛 IEEE ⚖ 222 KB