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[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - 1200 V MCCT: a new concept three terminal MOS-gated thyristor

✍ Scribed by Iwamuro, N.; Iwaana, T.; Harada, Y.; Seki, Y.

Book ID: 111981810
Publisher: IEEE
Year: 1997
Weight: 222 KB
Edition: 1997
Volume: 0
Category: Article
ISBN-13: 9780780339934
DOI: 10.1109/ispsd.1997.601484

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