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Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

✍ Scribed by J.M. Rafí; E. Simoen; K. Hayama; A. Mercha; F. Campabadal; H. Ohyama; C. Claeys


Book ID
108210641
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
517 KB
Volume
46
Category
Article
ISSN
0026-2714

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