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[IEEE 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. - Hong Kong (6-10 Nov. 1995)] 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings - A new gate current measurement technique for the characterization of hot-carrier-induced degradation in MOSFETs

✍ Scribed by Leang, S.E.

Book ID: 126732286
Publisher: IEEE
Year: 1995
Tongue: English
Weight: 334 KB
Category: Article
ISBN-13: 9780780326248
DOI: 10.1109/TENCON.1995.496390

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📜 SIMILAR VOLUMES

[IEEE 1995 IEEE TENCON. IEEE Region 10 I

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[IEEE 1995 IEEE TENCON. IEEE Region 10 I

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[IEEE 1995 IEEE TENCON. IEEE Region 10 I

[IEEE 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. - Hong Kong (6-10 Nov. 1995)] 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings - Fast numerical method for semiconductor device simulation

✍ Wong, T.Y.; Poon, M.C.; Sin, J.K.O.; Wong, M.; Lo, T.C.; Wong, H. 📂 Article 📅 1995 🏛 IEEE ⚖ 645 KB

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