✦ LIBER ✦

RF performance degradation in nMOS transistors due to hot carrier effects

✍ Scribed by Jong-Tae Park; Byung-Jin Lee; Dong-Wook Kim; Chong-Gun Yu; Hyun-Kyu Yu

Book ID: 114538160
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 166 KB
Volume: 47
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.841242

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

on-State Hot Carrier Degradation in Drai

on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors

✍ Varghese, D.; Moens, P.; Alam, M.A. 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 908 KB

S-parameter performance degradation in p

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects

✍ M.A. Belaïd; M. Gares; K. Daoud; Ph. Eudeline 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 690 KB

RF circuit performance degradation due t

RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology

✍ Qiang Li; Jinlong Zhang; Wei Li; Yuan, J.S.; Yuan Chen; Oates, A.S. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 147 KB

Dynamic hot carrier degradation effects

Dynamic hot carrier degradation effects in CMOS submicron transistors

✍ C. Bergonzoni; G.Dalla Libera; R. Benecchi; A. Nannini 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 359 KB

Reliability effects on MOS transistors d

Reliability effects on MOS transistors due to hot-carrier injection

✍ Kueing-Long Chen; Saller, S.A.; Groves, I.A.; Scott, D.B. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 770 KB

Channel hot-carrier degradation in pMOS

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

✍ E. Amat; T. Kauerauf; R. Degraeve; R. Rodríguez; M. Nafría; X. Aymerich; G. Groe 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 319 KB

A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the