Dynamic hot carrier degradation effects in CMOS submicron transistors
β Scribed by C. Bergonzoni; G.Dalla Libera; R. Benecchi; A. Nannini
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 359 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0026-2714
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## Abstract The degradation produced by channel hotβcarrier (CHC) on short channel transistors with highβk dielectric has been analyzed. For short channel transistors (__L__<0.15βΒ΅m), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the βclassicalβ __V__~G~=__V__
The dynamics of intersubband relaxation in GaAs quantum wells and the role of hot carriers and the phonon distributions have been investigated using two different optical techniques with femtosecond resolution: 1) time-resolved photoluminescence and 2) pump and probe experiments. The (2 \(\rightarro