𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Dynamic hot carrier degradation effects in CMOS submicron transistors

✍ Scribed by C. Bergonzoni; G.Dalla Libera; R. Benecchi; A. Nannini


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
359 KB
Volume
32
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Simulation of the hot-carrier degradatio
✍ E. Amat; T. Kauerauf; R. Degraeve; R. RodrΓ­guez; M. NafrΓ­a; X. Aymerich; G. Groe πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 302 KB

## Abstract The degradation produced by channel hot‐carrier (CHC) on short channel transistors with high‐k dielectric has been analyzed. For short channel transistors (__L__<0.15 ¡m), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the β€˜classical’ __V__~G~=__V__

Ultrafast dynamics of intersubband relax
✍ D. Morris; D. Houde; B. Deveaud; A. Regreny πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 144 KB

The dynamics of intersubband relaxation in GaAs quantum wells and the role of hot carriers and the phonon distributions have been investigated using two different optical techniques with femtosecond resolution: 1) time-resolved photoluminescence and 2) pump and probe experiments. The (2 \(\rightarro