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On modelling thermal oxidation of Silicon I: theory

✍ Scribed by Vinay S. Rao; Thomas J. R. Hughes

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
152 KB
Volume
47
Category
Article
ISSN
0029-5981

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✦ Synopsis

This work focuses on a new mathematical framework to model the process of thermal oxidation in silicon. The mathematical model is derived from the fundamental conservation equations of mechanics. The mass balance law provides the description of the oxidant transport and the Si}SiO interface motion, and momentum balance provides the framework to model the displacements and stresses in the bulk and the oxide. The displacements de"ne the geometry of the "nal oxide structure. The large expansion is treated within a mathematically exact formulation following a split of the deformation gradient. A thermodynamically consistent constitutive equation for silicon dioxide is suggested to represent recent experimental data.

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