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Recent Advances in Models for Thermal Oxidation of Silicon

✍ Scribed by Krishna Garikipati; Vinay S. Rao

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
706 KB
Volume
174
Category
Article
ISSN
0021-9991

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✦ Synopsis

Recent advances are presented in the models for thermal oxidation that have been been introduced by Rao and co-workers. The level-set formulation for movement of the Si-SiO 2 interface has been improved by the application of an efficient velocityprojection scheme for noninterface points. A penalty formulation has been introduced to enforce positive concentrations in the presence of discontinuities. The annealinginduced expansion of SiO 2 has been established as an important effect and a phenomenological relation has been identified for it. Inelastic volumetric strains have been proposed, evolution equations have been specified, and the underlying thermodynamics has been elucidated. The enhanced strain finite-element method has been applied to the inhomogeneous expansion of interface elements that have silicon and SiO 2 parts to them.

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