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On modelling thermal oxidation of Silicon II: numerical aspects

✍ Scribed by Vinay S. Rao; Thomas J. R. Hughes; Krishna Garikipati

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
900 KB
Volume
47
Category
Article
ISSN
0029-5981

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✦ Synopsis

The implementation of a new model to simulate the oxidation of Silicon (see Part I) is presented in this paper. The implementation is done within a "nite element framework. The work involves representation of the Silicon}Silicon dioxide interface in a mesh-independent manner. The interface description and evolution is accomplished using the level-set method. Formulation of a single "nite element containing multiple materials is described. A discontinuously varying oxidant density "eld is modelled along with its reaction with Silicon. Large expansion of Silicon dioxide is incorporated into the constitutive equations. A staggered scheme to obtain the solution to the coupled set of equations is given.

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