At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to h
Antireflection properties of thermally grown silicon oxide on silicon optical elements
β Scribed by M. Miler
- Publisher
- Elsevier Science
- Year
- 1967
- Weight
- 189 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0020-0891
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π SIMILAR VOLUMES
This work focuses on a new mathematical framework to model the process of thermal oxidation in silicon. The mathematical model is derived from the fundamental conservation equations of mechanics. The mass balance law provides the description of the oxidant transport and the Si}SiO interface motion,
The implementation of a new model to simulate the oxidation of Silicon (see Part I) is presented in this paper. The implementation is done within a "nite element framework. The work involves representation of the Silicon}Silicon dioxide interface in a mesh-independent manner. The interface descripti
## Influence of Mechanical Stress on Thermal Oxidation Phenomena of Silicon Some phenomena of the thermal wet oxidation of polycrystalline silicon structures are discussed in connection with the geometry of this structures and mechanical stress present in the growing oxide layer. A model is presen