The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with disl
Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon
✍ Scribed by Feklisova, O. V. ;Mariani-Regula, G. ;Pichaud, B. ;Yakimov, E. B.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 146 KB
- Volume
- 171
- Category
- Article
- ISSN
- 0031-8965
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