𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

✍ Scribed by Feklisova, O. V. ;Mariani-Regula, G. ;Pichaud, B. ;Yakimov, E. B.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
146 KB
Volume
171
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Influence of Dislocations on Nitrogen–Ox
✍ Yang, Deren ;Que, Duanlin 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 119 KB 👁 1 views

The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with disl

Electrical Activity of Nitrogen–Oxygen C
✍ Xiaodong Pi; Deren Yang; Xiangyang Ma; Qiong Shui; Duanlin Que 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 82 KB

The electrical activity of nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon treated by hydrogen plasma was investigated. It was observed that in the hydrogenated NCZ samples the absorption line intensity of m-N±O (N±O complexes inducing middle infrared absorption lines) de

Effect of Oxygen Content on the Electric
✍ Cai, W. ;Zhao, Y.G. ;He, Y.Z. ;Zhang, L.W. ;Zhu, M.H. ;Huang, H.S. ;Liu, M.L. ;C 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 102 KB 👁 2 views

The effect of oxygen content on the electrical transport properties of La 0.4 Ca 0.6 MnO 3--y was studied. Upon decreasing oxygen content, the lattice parameters a, b and c of the samples increase and the electrical resistivity of the samples also increases abruptly, contradicting what is expected i