✦ LIBER ✦

Influence of Dislocations on Nitrogen–Oxygen Complex in Silicon

✍ Scribed by Yang, Deren ;Que, Duanlin

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 119 KB
Volume: 171
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199901)171:1<203::aid-pssa203>3.0.co;2-l

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✦ Synopsis

The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with dislocations was almost the same as in dislocation-free NCZ silicon. However, the N±O complexes in NCZ silicon with dislocations were annihilated after annealing for only 2 h, while those complexes in dislocation-free NCZ silicon were annihilated after annealing for 60 h. It is considered that the formation of N±O complexes is suppressed by dislocations and its mechanism is also discussed.

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