Electrical Activity of Nitrogen–Oxygen Complexes in Silicon

✍ Scribed by Xiaodong Pi; Deren Yang; Xiangyang Ma; Qiong Shui; Duanlin Que

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 82 KB
• Volume: 221
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200010)221:2<641::aid-pssb641>3.0.co;2-z

✦ Synopsis

The electrical activity of nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon treated by hydrogen plasma was investigated. It was observed that in the hydrogenated NCZ samples the absorption line intensity of m-N±O (N±O complexes inducing middle infrared absorption lines) decreased. Meanwhile, the carrier concentration in the near-surface region was also reduced. The mechanism of the interaction between hydrogen and m-N±O was analyzed. We conclude that m-N±O were also electrically active like f-N±O (N±O complexes inducing far infrared absorption lines) which were believed to be shallow donors. It is inferred that m-N±O and f-N±O had the same origins. It is also suggested that new complexes, m-N±O±H, were formed as a result of the interaction between hydrogen and m-N±O.