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Structure of Oxygen and Silicon Interstitials in Silicon

✍ Scribed by Dzelme, J. ;Ertsinsh, I. ;Zapol, B. ;Misiuk, A.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
110 KB
Volume
171
Category
Article
ISSN
0031-8965

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The electrical activity of nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon treated by hydrogen plasma was investigated. It was observed that in the hydrogenated NCZ samples the absorption line intensity of m-N±O (N±O complexes inducing middle infrared absorption lines) de