Magnesium–Oxygen Complex Impurities in Silicon
✍ Scribed by L.T. Ho
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 91 KB
- Volume
- 210
- Category
- Article
- ISSN
- 0370-1972
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The electrical activity of nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon treated by hydrogen plasma was investigated. It was observed that in the hydrogenated NCZ samples the absorption line intensity of m-N±O (N±O complexes inducing middle infrared absorption lines) de
The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with disl