This work focuses on a new mathematical framework to model the process of thermal oxidation in silicon. The mathematical model is derived from the fundamental conservation equations of mechanics. The mass balance law provides the description of the oxidant transport and the Si}SiO interface motion,
Influence of mechanical stress on thermal oxidation phenomena of silicon
β Scribed by D. Knoll; T. Grabolla; E. Bugiel
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 575 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Influence of Mechanical Stress on Thermal Oxidation Phenomena of Silicon
Some phenomena of the thermal wet oxidation of polycrystalline silicon structures are discussed in connection with the geometry of this structures and mechanical stress present in the growing oxide layer. A model is presented considering the influence of the stress on the linear and parabolic oxidation rate constants. Basing on this model experimental results concerning the influence of oxidation parameters on the oxidepolysilicon interface structure and on closely related electrical properties can be explained.
&Is werden einige Phanoniene bei der thermischen Feuchtoxidation von polykristallinen Silizium-Strukturen in Zusamnienhang mit der Geometrie dieser Strukturen und mechanischen Spannungen in der wachsenden Oxidschicht diskutiert. Ein Model1 wird vorgestellt, das den EinfluB dieser Spannungen auf die lineare und parabolische Oxydationsratenkonstante beriicksichtigt. Mit Hilfe diescs Modells lassen sich experimentelle Ergebnisse zum EinfluB der Oxydationsbedingungen auf die Ausbildung der poly-Siliziuni/Oxid-Grenzflachenstruktur und damit eng verbundener elektrischer Eigenschaften dieser Struktur interpretieren.
π SIMILAR VOLUMES
The implementation of a new model to simulate the oxidation of Silicon (see Part I) is presented in this paper. The implementation is done within a "nite element framework. The work involves representation of the Silicon}Silicon dioxide interface in a mesh-independent manner. The interface descripti