✦ LIBER ✦

X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on silicon

✍ Scribed by G. Hollinger; Y. Jugnet; P. Pertosa; Tran Minh Duc

Publisher: Elsevier Science
Year: 1975
Tongue: English
Weight: 426 KB
Volume: 36
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(75)80276-4

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✦ Synopsis

At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to have the silicon dioxide composition with m excess in oxygen ancentration. By correMing the siLiccn 2p or 2s bindingenergy shifts with oxygen KLL Auger energy and oxygen Is bindingenergy shifts. it is shown that a Fermi level shift znd differential extra-atomic relaxation energy in the interfziai region must be invoked, in addition to chemical structure considerations, to interpret these data.

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