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Properties of oxidized silicon as determined by angular-dependent X-ray photoelectron spectroscopy

✍ Scribed by J.M. Hill; D.G. Royce; C.S. Fadley; L.F. Wagner; F.J. Grunthaner

Publisher: Elsevier Science
Year: 1976
Tongue: English
Weight: 756 KB
Volume: 44
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(76)80496-4

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✦ Synopsis

Silicon with thermally-grown oxide overlayers m the thickness range IS-89 A IS studied by angulardcpendent XPS.

Electron attenuation lengths at 1382 eV are found to be 37 +-4 A in SiOz and 27 +-6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.

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