## Silicon with thermally-grown oxide overlayers m the thickness range IS-89 A IS studied by angulardcpendent XPS. Electron attenuation lengths at 1382 eV are found to be 37 +-4 A in SiOz and 27 +-6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.
Angular-dependent X-ray photoemission study of oxidized silicon at low X-ray incidence angles
✍ Scribed by M. Mehta; C.S. Fadley
- Publisher
- Elsevier Science
- Year
- 1977
- Tongue
- English
- Weight
- 577 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0009-2614
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The small angle X-ray scattering technique was used to probe structural heterogeneity on the scale of nanometers within Nafion@/[silicon oxide], Nafion@/[ORMOSIL], and Nafion@/[dimethylsiloxane] hybrid membranes. The results of this study reinforced the working hypothesis of morphological template a
The use of resonant low-angle x-ray di †raction, combining specular and o †-specular scans, has been used to characterize accurately and self-consistently a set of magnetron-sputtered Co/Cu multilayers. This study has permitted their mesoscopic structure and quality of interfaces to be determined. M