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Uncertainty in measurement of overlayer thickness of thermally oxidized silicon using x-ray photoelectron spectroscopy

✍ Scribed by Th. Gross; A. Lippitz; W. Unger; B. Güttler

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
74 KB
Volume
29
Category
Article
ISSN
0142-2421

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✦ Synopsis

Overlayers of SiO 2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide overlayer by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The relative combined standard uncertainty of the method was found to be ~15%. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of considerable importance for both the estimated values of overlayer thickness and combined standard uncertainties. The XPS results were compared with ellipsometry data.

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