Numerical modelling of viscous flow in silicon thermal oxidation with the boundary element method
✍ Scribed by A. V. Panjukhin; N. A. Kolobov; N. A. Leontjeva
- Publisher
- John Wiley and Sons
- Year
- 1994
- Tongue
- English
- Weight
- 544 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0894-3370
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✦ Synopsis
Abstract
This paper describes the application of the boundary element method to solving two‐dimensional steady slow viscous flow problems (creeping flow) in thermal silicon oxidation. The proposed method used the velocity–pressure formulation. The use of the incompressibility condition as a boundary condition and the application of the second Green's identity to transform the domain integral into a boundary integral result in a system of three boundary integral equations for velocity components and pressure. Solution of this system to be an ill‐posed problem because of the presence of boundary conditions of the first kind. Two methods of regularization are employed. The numerical results for trench oxidation process are presented.
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