This work focuses on a new mathematical framework to model the process of thermal oxidation in silicon. The mathematical model is derived from the fundamental conservation equations of mechanics. The mass balance law provides the description of the oxidant transport and the Si}SiO interface motion,
โฆ LIBER โฆ
Steady state thermal modelling of casting of silicon
โ Scribed by S. Rajendran; William R. Wilcox
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 713 KB
- Volume
- 69
- Category
- Article
- ISSN
- 0022-0248
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