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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

✍ Scribed by Potbhare, Siddharth; Goldsman, Neil; Pennington, Gary; Lelis, Aivars; McGarrity, James M.

Book ID: 120586080
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 661 KB
Volume: 100
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2335967

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