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Physics-based numerical modeling and characterization of 6H-silicon-carbide metalâoxideâsemiconductor field-effect transistors

✍ Scribed by Powell, Stephen K.; Goldsman, Neil; McGarrity, James M.; Bernstein, Joseph; Scozzie, Charles J.; Lelis, Aivars

Book ID: 120423519
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 1017 KB
Volume: 92
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1499523

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