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Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors

✍ Scribed by Kobayashi, Masaharu; Hiramoto, Toshiro

Book ID: 121840849
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 799 KB
Volume: 103
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2874247

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