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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

✍ Scribed by Cho, K. H.; Yeo, K. H.; Yeoh, Y. Y.; Suk, S. D.; Li, M.; Lee, J. M.; Kim, M.-S.; Kim, D.-W.; Park, D.; Hong, B. H.; Jung, Y. C.; Hwang, S. W.

Book ID: 121199210
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 299 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2840187

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